High resistivity and low dielectric loss of LuFe1-xOsxO3 (x=0.0-0.10) ferrites

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dc.authoridYILDIRIM, Yucel/0000-0001-6193-0373|DURMUS, Zehra/0000-0002-0463-4292;
dc.authorwosidYILDIRIM, Yucel/L-3394-2018
dc.authorwosidPolat, Ozgur/ABC-2309-2020
dc.authorwosidDURMUS, Zehra/C-9847-2011
dc.authorwosidCoskun, Mustafa/AAE-5589-2020
dc.contributor.authorCoskun, M.
dc.contributor.authorPolat, Ozgur
dc.contributor.authorYildirim, Y.
dc.contributor.authorDurmus, Z.
dc.contributor.authorSen, C.
dc.contributor.authorCaglar, Y.
dc.contributor.authorCaglar, M.
dc.date.accessioned2024-07-18T20:42:13Z
dc.date.available2024-07-18T20:42:13Z
dc.date.issued2023
dc.departmentİstanbul Bilgi Üniversitesien_US
dc.description.abstractLuFe1-xOsxO3 (x = 0, 0.05, and 0.10) compounds were synthesized and their resistivity, real and imaginary portion of the impedance and frequency-dependent loss tangent were examined at varied temperature settings (from - 100 degrees C to 100 degrees C by 20 degrees C step). Impedance and resistivity values increased as a result of the doping procedure, whereas activation and loss tangent values decreased. According to the X-ray photoelectron spectroscopy (XPS) study, Lu possesses a 3 + oxidation state, and the oxygen 1s spectrum displayed peaks for lattice oxygen and oxygen vacancy. Particle agglomeration and void formation were visible in scanning electron microscopy (SEM) pictures. Single and double oxygen vacancies and ion hopping between Fe2+ and Fe3+ ions were responsible for the reported activation energies. The frequency-dependent loss tangent results showed that all compounds have a highly low loss factor even at 100 degrees C.en_US
dc.description.sponsorshipTurkiye Bilimsel ve Teknolojik Arastirma Kurumu [116F025]en_US
dc.description.sponsorshipThis study was supported by Turkiye Bilimsel ve Teknolojik Arastirma Kurumu, (Grant Number 116F025).en_US
dc.identifier.doi10.1007/s10854-023-10141-2
dc.identifier.issn0957-4522
dc.identifier.issn1573-482X
dc.identifier.issue8en_US
dc.identifier.scopus2-s2.0-85149989534en_US
dc.identifier.scopusqualityQ2en_US
dc.identifier.urihttps://doi.org/10.1007/s10854-023-10141-2
dc.identifier.urihttps://hdl.handle.net/11411/7181
dc.identifier.volume34en_US
dc.identifier.wosWOS:000948433400003en_US
dc.identifier.wosqualityN/Aen_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.language.isoenen_US
dc.publisherSpringeren_US
dc.relation.ispartofJournal of Materials Science-Materials in Electronicsen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectMagnetic-Propertiesen_US
dc.subjectElectrical-Propertiesen_US
dc.subjectOptical-Propertiesen_US
dc.subjectCrystal-Structureen_US
dc.subjectRelaxationen_US
dc.subjectFilmsen_US
dc.titleHigh resistivity and low dielectric loss of LuFe1-xOsxO3 (x=0.0-0.10) ferritesen_US
dc.typeArticleen_US

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