The electrical and dielectric features of Al/YbFeO3/p-Si/Al and Al/YbFe0.90Co0.10O3/p-Si/Al structures with interfacial perovskite-oxide layer depending on bias voltage and frequency

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dc.authorid0000-0002-0463-4292
dc.authorid0000-0001-6193-0373
dc.contributor.authorCoskun, M.
dc.contributor.authorPolat, O.
dc.contributor.authorOrak, I.
dc.contributor.authorCoskun, F. M.
dc.contributor.authorYildirim, Y.
dc.contributor.authorSobola, D.
dc.contributor.authorTurut, A.
dc.date.accessioned2026-04-04T18:55:23Z
dc.date.available2026-04-04T18:55:23Z
dc.date.issued2024
dc.departmentİstanbul Bilgi Üniversitesi
dc.description.abstractIn this investigation, thin films of YbFeO3, both in its pure form and doped with 10% Co, were fabricated on a p-Si substrate at 500 degrees C through the radio-frequency magnetron sputtering method. Examination via Scanning Electron Microscopy demonstrated a porous texture for the pure sample, contrasting with a smooth and crack-free surface post-Co doping. Analysis via X-ray photoelectron spectroscopy unveiled Yb's 3 + oxidation state, alongside the presence of lattice oxygen, oxygen vacancies, and adsorbed oxygen evident in Gaussian fitting curves. Photoluminescence spectroscopy revealed an augmented emission intensity, likely attributed to increased defect initiation in the Co-doped specimen. Moreover, Raman spectroscopy was employed to identify vibration modes in the examined samples, demonstrating shifts in Raman peaks indicative of Co substitution and subsequent distortion in the crystal structure of YbFeO3. Electrical assessments were conducted at room temperature (300 K) under ambient conditions, employing voltage and frequency as variables. Capacitance-voltage measurements illustrated the emergence of an accumulation, with depletion and inversion regions manifesting at different frequencies based on the applied voltage, attributed to the YbFeO3 interfacial layer at the Al and p-Si interface. The conductance-voltage characteristics indicated that the structure exhibited maximum conductance in the accumulation region. Series resistance for these configurations was deduced from capacitance-conductance-voltage measurements, indicating a dependence on both bias voltage and frequency. The doping process led to a reduction in capacitance and series resistance, accompanied by an increase in conductance values. After obtaining corrected capacitance and conductance parameters, it became evident that series resistance significantly influences both parameters. Interface state density (N-ss), determined through the Hill-Coleman relation demonstrated a decreasing trend with increasing frequency. The pure sample exhibited higher interface state density compared to the Co-doped sample at each frequency, highlighting that the 10% Co-doped YbFeO3 thin film enhances the quality of the metal-semiconductor interface properties compared to the pure contact.
dc.description.sponsorshipScientific and Technological Research Council of Turkiye (TUBITAK) [116F025]; Istanbul Medeniyet University Science and Advanced Technology Research Center (IMU-BILTAM); MEYS CR [LM2023051]
dc.description.sponsorshipThis work was supported by The Scientific and Technological Research Council of Turkiye (TUBITAK) through Grant No: 116F025. We acknowledge Istanbul Medeniyet University Science and Advanced Technology Research Center (IMU-BILTAM). We acknowledge CzechNanoLab Research Infrastructure supported by MEYS CR (LM2023051).
dc.identifier.doi10.1007/s10854-024-12896-8
dc.identifier.doi10.1007/s10854-024-12896-8
dc.identifier.issn0957-4522
dc.identifier.issn1573-482X
dc.identifier.issue17
dc.identifier.scopus2-s2.0-85195933596
dc.identifier.scopusqualityQ2
dc.identifier.urihttps://doi.org/10.1007/s10854-024-12896-8
dc.identifier.urihttps://hdl.handle.net/11411/10397
dc.identifier.volume35
dc.identifier.wosWOS:001250021900016
dc.identifier.wosqualityQ2
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.language.isoen
dc.publisherSpringer
dc.relation.ispartofJournal of Materials Science-Materials in Electronics
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı
dc.rightsinfo:eu-repo/semantics/openAccess
dc.snmzKA_WoS_20260402
dc.snmzKA_Scopus_20260402
dc.subjectThin-Films
dc.subjectMagnetic-Properties
dc.subjectTemperature
dc.titleThe electrical and dielectric features of Al/YbFeO3/p-Si/Al and Al/YbFe0.90Co0.10O3/p-Si/Al structures with interfacial perovskite-oxide layer depending on bias voltage and frequency
dc.typeArticle

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