The structural studies and optical characteristics of phase-segregated Ir-doped LuFeO3-? films
dc.authorid | coskun, mustafa/0000-0001-6670-8886|YILDIRIM, Yucel/0000-0001-6193-0373|DURMUS, Zehra/0000-0002-0463-4292|Polat, Ozgur/0000-0002-7410-1272 | |
dc.authorwosid | Coskun, Mustafa/AAE-5589-2020 | |
dc.authorwosid | coskun, mustafa/X-7074-2019 | |
dc.authorwosid | Polat, Ozgur/ABC-2309-2020 | |
dc.authorwosid | YILDIRIM, Yucel/L-3394-2018 | |
dc.authorwosid | DURMUS, Zehra/C-9847-2011 | |
dc.contributor.author | Polat, O. | |
dc.contributor.author | Coskun, F. M. | |
dc.contributor.author | Yildirim, Y. | |
dc.contributor.author | Sobola, D. | |
dc.contributor.author | Ercelik, M. | |
dc.contributor.author | Arikan, M. | |
dc.contributor.author | Coskun, M. | |
dc.date.accessioned | 2024-07-18T20:40:26Z | |
dc.date.available | 2024-07-18T20:40:26Z | |
dc.date.issued | 2023 | |
dc.department | İstanbul Bilgi Üniversitesi | en_US |
dc.description.abstract | In this work, we carefully examined how Ir substitution into Fe sites can change the band of the LuFeO3 (LFO) material. LFO and Ir-doped LFO (LuFe1-xIrxO3 or LFIO for short, where x = 0.05 and 0.10) thin films were synthesized by utilizing magnetron sputtering techniques. The films were grown on silicon and indium tin oxide (ITO) substrates at 500 degrees C. The crystallographic orientation of the films was examined using X-ray diffraction (XRD) analysis. The crystallographic orientation of the thin films was examined using an X-ray diffractometer (XRD). For surface topography research, atomic force microscopy (AFM) was employed. To look for the recombination of photogenerated electron-hole pairs in the materials under investigation, photoluminescence (PL) spectroscopy was used. Raman spectroscopy is then utilized to gather data on crystal symmetry as well as disorders and defects in the oxide materials. It was demonstrated that the LFO band gap was altered from 2.35 to 2.72 eV by Ir substitution into Fe sites. Moreover, diffuse reflectance spectroscopy (DRS) was used to analyze conductivity, real and imaginary components of the dielectric constant, refractive index (n), extinction coefficient (k), and reflectance percentage. | en_US |
dc.description.sponsorship | Scientific and Technological Research Council of Turkey (TUBITAK) [116F025]; MEYS CR [LM 2018110]; Istanbul Medeniyet University Science and Advanced Technology Research Center; Istanbul Medeniyet University Science and Advanced Technology Research Center (IMU-BILTAM) | en_US |
dc.description.sponsorship | This work was supported by The Scientific and Technological Research Council of Turkey (TUBITAK) through Grant No: 116F025. We acknowledge the CEITEC Nano Research Infrastructure supported by MEYS CR (LM 2018110 and Istanbul Medeniyet University Science and Advanced Technology Research Center (IMU-BILTAM). | en_US |
dc.identifier.doi | 10.1007/s00339-023-06486-4 | |
dc.identifier.issn | 0947-8396 | |
dc.identifier.issn | 1432-0630 | |
dc.identifier.issue | 3 | en_US |
dc.identifier.scopus | 2-s2.0-85148488069 | en_US |
dc.identifier.scopusquality | Q2 | en_US |
dc.identifier.uri | https://doi.org/10.1007/s00339-023-06486-4 | |
dc.identifier.uri | https://hdl.handle.net/11411/7112 | |
dc.identifier.volume | 129 | en_US |
dc.identifier.wos | WOS:000935899600001 | en_US |
dc.identifier.wosquality | N/A | en_US |
dc.indekslendigikaynak | Web of Science | en_US |
dc.indekslendigikaynak | Scopus | en_US |
dc.language.iso | en | en_US |
dc.publisher | Springer Heidelberg | en_US |
dc.relation.ispartof | Applied Physics A-Materials Science & Processing | en_US |
dc.relation.publicationcategory | Makale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı | en_US |
dc.rights | info:eu-repo/semantics/closedAccess | en_US |
dc.subject | Thin Film | en_US |
dc.subject | Lufeo3 | en_US |
dc.subject | Ir Substitution | en_US |
dc.subject | Band Gap Modification | en_US |
dc.subject | Optical Dielectric Constant | en_US |
dc.subject | Optical Conductivity | en_US |
dc.subject | Photoluminescence | en_US |
dc.subject | Raman | en_US |
dc.subject | Electrical-Properties | en_US |
dc.subject | Band-Gap | en_US |
dc.subject | Oxygen Vacancies | en_US |
dc.subject | Particle-Size | en_US |
dc.subject | Thin-Films | en_US |
dc.subject | Photoluminescence | en_US |
dc.subject | Features | en_US |
dc.subject | Ymno3 | en_US |
dc.subject | Raman | en_US |
dc.subject | Substitution | en_US |
dc.title | The structural studies and optical characteristics of phase-segregated Ir-doped LuFeO3-? films | en_US |
dc.type | Article | en_US |