The structural studies and optical characteristics of phase-segregated Ir-doped LuFeO3-? films

dc.authoridcoskun, mustafa/0000-0001-6670-8886|YILDIRIM, Yucel/0000-0001-6193-0373|DURMUS, Zehra/0000-0002-0463-4292|Polat, Ozgur/0000-0002-7410-1272
dc.authorwosidCoskun, Mustafa/AAE-5589-2020
dc.authorwosidcoskun, mustafa/X-7074-2019
dc.authorwosidPolat, Ozgur/ABC-2309-2020
dc.authorwosidYILDIRIM, Yucel/L-3394-2018
dc.authorwosidDURMUS, Zehra/C-9847-2011
dc.contributor.authorPolat, O.
dc.contributor.authorCoskun, F. M.
dc.contributor.authorYildirim, Y.
dc.contributor.authorSobola, D.
dc.contributor.authorErcelik, M.
dc.contributor.authorArikan, M.
dc.contributor.authorCoskun, M.
dc.date.accessioned2024-07-18T20:40:26Z
dc.date.available2024-07-18T20:40:26Z
dc.date.issued2023
dc.departmentİstanbul Bilgi Üniversitesien_US
dc.description.abstractIn this work, we carefully examined how Ir substitution into Fe sites can change the band of the LuFeO3 (LFO) material. LFO and Ir-doped LFO (LuFe1-xIrxO3 or LFIO for short, where x = 0.05 and 0.10) thin films were synthesized by utilizing magnetron sputtering techniques. The films were grown on silicon and indium tin oxide (ITO) substrates at 500 degrees C. The crystallographic orientation of the films was examined using X-ray diffraction (XRD) analysis. The crystallographic orientation of the thin films was examined using an X-ray diffractometer (XRD). For surface topography research, atomic force microscopy (AFM) was employed. To look for the recombination of photogenerated electron-hole pairs in the materials under investigation, photoluminescence (PL) spectroscopy was used. Raman spectroscopy is then utilized to gather data on crystal symmetry as well as disorders and defects in the oxide materials. It was demonstrated that the LFO band gap was altered from 2.35 to 2.72 eV by Ir substitution into Fe sites. Moreover, diffuse reflectance spectroscopy (DRS) was used to analyze conductivity, real and imaginary components of the dielectric constant, refractive index (n), extinction coefficient (k), and reflectance percentage.en_US
dc.description.sponsorshipScientific and Technological Research Council of Turkey (TUBITAK) [116F025]; MEYS CR [LM 2018110]; Istanbul Medeniyet University Science and Advanced Technology Research Center; Istanbul Medeniyet University Science and Advanced Technology Research Center (IMU-BILTAM)en_US
dc.description.sponsorshipThis work was supported by The Scientific and Technological Research Council of Turkey (TUBITAK) through Grant No: 116F025. We acknowledge the CEITEC Nano Research Infrastructure supported by MEYS CR (LM 2018110 and Istanbul Medeniyet University Science and Advanced Technology Research Center (IMU-BILTAM).en_US
dc.identifier.doi10.1007/s00339-023-06486-4
dc.identifier.issn0947-8396
dc.identifier.issn1432-0630
dc.identifier.issue3en_US
dc.identifier.scopus2-s2.0-85148488069en_US
dc.identifier.scopusqualityQ2en_US
dc.identifier.urihttps://doi.org/10.1007/s00339-023-06486-4
dc.identifier.urihttps://hdl.handle.net/11411/7112
dc.identifier.volume129en_US
dc.identifier.wosWOS:000935899600001en_US
dc.identifier.wosqualityN/Aen_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.language.isoenen_US
dc.publisherSpringer Heidelbergen_US
dc.relation.ispartofApplied Physics A-Materials Science & Processingen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectThin Filmen_US
dc.subjectLufeo3en_US
dc.subjectIr Substitutionen_US
dc.subjectBand Gap Modificationen_US
dc.subjectOptical Dielectric Constanten_US
dc.subjectOptical Conductivityen_US
dc.subjectPhotoluminescenceen_US
dc.subjectRamanen_US
dc.subjectElectrical-Propertiesen_US
dc.subjectBand-Gapen_US
dc.subjectOxygen Vacanciesen_US
dc.subjectParticle-Sizeen_US
dc.subjectThin-Filmsen_US
dc.subjectPhotoluminescenceen_US
dc.subjectFeaturesen_US
dc.subjectYmno3en_US
dc.subjectRamanen_US
dc.subjectSubstitutionen_US
dc.titleThe structural studies and optical characteristics of phase-segregated Ir-doped LuFeO3-? filmsen_US
dc.typeArticleen_US

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